TSM60NB099CF C0G
Nambari ya Bidhaa ya Mtengenezaji:

TSM60NB099CF C0G

Product Overview

Mtengenezaji:

Taiwan Semiconductor Corporation

Nambari ya Kipande:

TSM60NB099CF C0G-DG

Maelezo:

MOSFET N-CH 600V 38A ITO220S
Maelezo ya Kina:
N-Channel 600 V 38A (Tc) 69W (Tc) Through Hole ITO-220S

Hesabu:

905 Pcs Mpya Halisi Katika Hifadhi
12896678
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
t1M1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

TSM60NB099CF C0G Maalum ya Kiufundi

Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Taiwan Semiconductor
Ufungashaji
Tube
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
600 V
Sasa - Drain inayoendelea (id) @ 25 ° C
38A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
99mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
62 nC @ 10 V
Vgs (Max)
±30V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
2587 pF @ 100 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
69W (Tc)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi cha Kifaa cha Muuzaji
ITO-220S
Kifurushi / Kesi
TO-220-3 Full Pack
Nambari ya Bidhaa ya Msingi
TSM60

Karatasi za Takwimu na Nyaraka

Karatasi za data
TSM60NB099CF C0G

Taarifa za Ziada

Kifurushi cha Kawaida
4,000
Majina mengine
TSM60NB099CF C0G-DG
TSM60NB099CFC0G
-2068-TSM60NB099CFC0G

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Mifano Mbadala

NAMBARI YA SEHEMU
TSM60NB099CF
MTENGENEZAJI
Taiwan Semiconductor Corporation
KIASI KILICHOPATIKANA
0
Nambari ya Sehemu
TSM60NB099CF-DG
BEI YA KILA KITU
6.64
AINA YA KUBADILISHA
Parametric Equivalent
NAMBARI YA SEHEMU
STF40N65M2
MTENGENEZAJI
STMicroelectronics
KIASI KILICHOPATIKANA
0
Nambari ya Sehemu
STF40N65M2-DG
BEI YA KILA KITU
2.83
AINA YA KUBADILISHA
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